报告题目(中文)：3D原子探针在表征III-V族半导体纳米线中的应用

报告题目(英文)：Atomic-scale investigation of group III-V semiconductor nanowires grown by MOCVD

报告内容简介：The bottom-up seeded nanowires have been raising increasing attention for applications due to cost consideration, in contrast to the traditional subtractive manufacture i.e., lithography processing. It has been argued that the metallic seeds (such as Au, Ni,) is capable of absorbing the adatoms from ambient precursors and precipitating them out in the form of crystals at the metal/semiconductor interface. As a result, the nanowire can grow along either in-plane or out of plane direction with respect to their substrate orientation. However, the growth mechanism of seeded nanowires is quite complicated, often leading to an uncontrollable nanowire morphology and compositional distribution. Therefore, delicate characterization is only approach to link the property with their morphology, and also provide important evidence for quality nanowire growth. In this presentation, he will demonstrate the APT characterization results of the semiconductor nanowires from group III-V and assess the dopant within the nanowires.

报告人姓名：屈江涛

报告人简介(中文)：屈江涛博士于西安电子科技大学取得本科学位，之后取得悉尼大学理学博士学位。目前任悉尼大学电镜分析中心（ACMM）研究员，主要研究任务是用先进纳米表征技术，例如3D原子探针（APT），球差电镜，进行低维材料的表征工作。

报告人单位(中文)：悉尼大学

报告人单位(英文)：The University of Sydney

报告时间：2019-08-30 10:00

报告地点：能源研究院东楼1楼会议室

主办单位：云顶yd222备用线路检测材料学院

联系人：李文献